Display device and method of manufacturing the display device

ABSTRACT

A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.

This application claims priority to Korean Patent Application No.10-2019-0098303, filed on Aug. 12, 2019, and all the benefits accruingtherefrom under 35 U.S.C. § 119, the content of which in its entirety isherein incorporated by reference.

BACKGROUND 1. Field

Embodiments of the invention relate to a display device and a method ofmanufacturing the display device.

2. Description of the Related Art

A display device is a device that visually displays image data. Such adisplay device typically includes a substrate divided into a displayarea and a non-display area. A pixel may be disposed on the substrate inthe display area, and a pad or the like may be disposed on the substratein the non-display area. On the pad, a driving circuit or the like maybe mounted and transmit a driving signal to the pixel.

SUMMARY

A display device may include a flexible substrate and a plurality oflaminated structures laminated sequentially on the flexible substrate.The structures of the display device may be formed on a carriersubstrate. When the structures are deposited and the carrier substrateis delaminated from the flexible substrate, it may not be easy todelaminate the flexible substrate and the carrier substrate from eachother.

An embodiment of the invention provides a display device in which it iseasy to delaminate a flexible substrate and a carrier substrate fromeach other.

An embodiment of the invention provides a method of manufacturing adisplay device in which it is easy to delaminate a flexible substrateand a carrier substrate from each other.

According to an embodiment, a method of manufacturing a display deviceincludes providing an inorganic layer on a carrier substrate, providinga first flexible substrate on the inorganic layer, providing a firstshielding layer including a metal on the first flexible substrate,providing a first barrier layer on the first shielding layer, andproviding a thin film transistor layer on the first barrier layer. Insuch an embodiment, the inorganic layer includes at least one materialselected from silicon nitride (SiNx), silicon oxide (SiOx), and siliconoxynitride (SiOxNy), and a thickness of the inorganic layer is a rangefrom 10 angstrom (Å) to 6000 Å.

In an embodiment, a thickness of the first shielding layer may be in arange from 10 Å to 6000 Å.

In an embodiment, the inorganic layer may prevent electrostaticattraction between the carrier substrate and the first flexiblesubstrate from being generated.

In an embodiment, the providing the first barrier layer may includeforming the first barrier layer using plasma enhanced chemical vapordeposition (“PECVD”).

In an embodiment, the method may further include providing a secondflexible substrate on a surface of the first barrier layer after theproviding the first barrier layer and before the providing the thin filmtransistor layer on the first barrier layer.

In an embodiment, the method may further include providing a secondshielding layer on a surface of the second flexible substrate before theproviding the second flexible substrate and after the providing the thinfilm transistor layer.

In an embodiment, the method may further include providing a secondbarrier layer on a surface of the second shielding layer after theproviding the second shielding layer on the surface of the secondflexible substrate and before the providing the thin film transistorlayer.

In an embodiment, a first coupling force between the inorganic layer andthe carrier substrate may be greater than a second coupling forcebetween the first flexible substrate and the inorganic layer.

In an embodiment, the method may further include delaminating thecarrier substrate and the inorganic layer from the surface of the firstflexible substrate after the providing the thin film transistor layer.

In an embodiment, the delaminating the carrier substrate and theinorganic layer from the surface of the first flexible substrate mayinclude delaminating the carrier substrate and the inorganic layer fromthe surface of the first flexible substrate using a mechanical detachingmethod.

According to another embodiment, a method of manufacturing a displaydevice includes providing a dipole-removing layer on a carriersubstrate, providing a flexible substrate on the dipole-removing layer,providing a barrier layer on the flexible substrate, and providing athin film transistor layer on the barrier layer. In such an embodiment,the dipole-removing layer includes an inorganic material, and athickness of the dipole-removing layer is in a range from about 10 Å toabout 6000 Å.

In an embodiment, the inorganic material may include at least onematerial selected from SiNx, SiOx, and SiOxNy.

In an embodiment, the method may further include delaminating thecarrier substrate and the dipole-removing layer from one surface of theflexible substrate after the providing the thin film transistor layer.

In an embodiment, the delaminating the carrier substrate and thedipole-removing layer from the surface of the flexible substrate mayinclude emitting ultraviolet lasers toward the surface of the flexiblesubstrate and removing the carrier substrate and the dipole-removinglayer from the surface of the flexible substrate using a mechanicaldetaching method.

According to another embodiment, a display device includes a firstflexible substrate, a first barrier layer disposed on a surface of thefirst flexible substrate, a thin film transistor layer disposed on asurface of the first barrier layer, and a residue disposed on anopposing surface of the first flexible substrate. In such an embodiment,the residue includes an inorganic material.

In an embodiment, the display device may further include a firstshielding layer disposed between the first flexible substrate and thefirst barrier layer.

In an embodiment, the first shielding layer may include a metal.

In an embodiment, the display device may further include a secondflexible substrate disposed between the first barrier layer and the thinfilm transistor layer and a second barrier layer disposed between thesecond flexible substrate and the thin film transistor layer.

In an embodiment, the display device may further include a secondshielding layer disposed between the second barrier layer and the secondflexible substrate. In such an embodiment, the second shielding layerincludes a metal.

In an embodiment, the inorganic material may include at least onematerial selected from SiNx, SiOx, and SiOxNy.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features of the disclosure will become more apparentby describing in detail exemplary embodiments thereof with reference tothe attached drawings, in which:

FIG. 1 is an arrangement plan view of a display device according to anembodiment;

FIG. 2 is a schematic partial cross-sectional view of the display devicein a bent state;

FIG. 3 is a cross-sectional view illustrating a pixel according to anembodiment;

FIG. 4 is a cross-sectional view illustrating a pixel according to analternative embodiment;

FIG. 5 is a flowchart illustrating a method of manufacturing the displaydevice according to an embodiment;

FIGS. 6 and 10 are cross-sectional views of processing operations of themethod of manufacturing the display device according to an embodiment;

FIG. 7 is an enlarged cross-sectional view illustrating area A of FIG.6;

FIG. 8 is a cross-sectional view illustrating electrostatic attractionbetween a carrier substrate and a flexible substrate;

FIG. 9 is a cross-sectional view illustrating a case in which adipole-removing layer blocks the electrostatic attraction between theflexible substrate and the carrier substrate;

FIG. 11 is a cross-sectional view illustrating a processing operation ofthe method of manufacturing a display device according to an alternativeembodiment;

FIG. 12 is a cross-sectional view illustrating a pixel according toanother alternative embodiment;

FIG. 13 is a cross-sectional view illustrating a pixel according toanother alternative embodiment;

FIG. 14 is a cross-sectional view illustrating a pixel according toanother alternative embodiment;

FIG. 15 is a flowchart illustrating a method of manufacturing thedisplay device according to an alternative embodiment;

FIGS. 16 to 18 are cross-sectional views illustrating processingoperations of a method of manufacturing a display device according to analternative embodiment;

FIGS. 19 and 20 are graphs illustrating a state in which a couplingforce between a flexible substrate and a carrier substrate increasesduring a deposition process of a barrier layer;

FIG. 21 is a cross-sectional view illustrating a case in which ashielding layer reduces the coupling force between the flexiblesubstrate and the carrier substrate;

FIG. 22 is a cross-sectional view illustrating one pixel according toanother alternative embodiment; and

FIG. 23 is a table illustrating a coupling force between a flexiblesubstrate and a carrier substrate according to another alternativeembodiment.

DETAILED DESCRIPTION

The invention will now be described more fully hereinafter withreference to the accompanying drawings, in which various embodiments areshown. The invention may, however, be embodied in different forms andshould not be construed as limited to the embodiments set forth herein.Rather, these embodiments are provided so that this disclosure will bethorough and complete, and will fully convey the scope of the inventionto those skilled in the art. The same reference numbers indicate thesame components throughout the specification. In the attached figures,the thickness of layers and regions is exaggerated for clarity.

It will be understood that, although the terms “first,” “second,”“third” etc. may be used herein to describe various elements,components, regions, layers and/or sections, these elements, components,regions, layers and/or sections should not be limited by these terms.These terms are only used to distinguish one element, component, region,layer or section from another element, component, region, layer orsection. Thus, “a first element,” “component,” “region,” “layer” or“section” discussed below could be termed a second element, component,region, layer or section without departing from the teachings herein.

It will also be understood that when a layer is referred to as being“on” another layer or substrate, it can be directly on the other layeror substrate, or intervening layers may also be present. In contrast,when an element is referred to as being “directly on” another element,there are no intervening elements present.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting. As used herein, thesingular forms “a,” “an,” and “the” are intended to include the pluralforms, including “at least one,” unless the content clearly indicatesotherwise. “Or” means “and/or.” “At least one of A and B” means “Aand/or B.” As used herein, the term “and/or” includes any and allcombinations of one or more of the associated listed items. It will befurther understood that the terms “comprises” and/or “comprising,” or“includes” and/or “including” when used in this specification, specifythe presence of stated features, regions, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, regions, integers, steps,operations, elements, components, and/or groups thereof.

“About” or “approximately” as used herein is inclusive of the statedvalue and means within an acceptable range of deviation for theparticular value as determined by one of ordinary skill in the art,considering the measurement in question and the error associated withmeasurement of the particular quantity (i.e., the limitations of themeasurement system).

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure belongs. It willbe further understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thedisclosure, and will not be interpreted in an idealized or overly formalsense unless expressly so defined herein.

Exemplary embodiments are described herein with reference to crosssection illustrations that are schematic illustrations of idealizedembodiments. As such, variations from the shapes of the illustrations asa result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, embodiments described herein should not beconstrued as limited to the particular shapes of regions as illustratedherein but are to include deviations in shapes that result, for example,from manufacturing. For example, a region illustrated or described asflat may, typically, have rough and/or nonlinear features. Moreover,sharp angles that are illustrated may be rounded. Thus, the regionsillustrated in the figures are schematic in nature and their shapes arenot intended to illustrate the precise shape of a region and are notintended to limit the scope of the claims.

A display device is a device which displays a moving picture or a stillimage and may be used for implementing a display screen of a variety ofproducts such as not only portable electronic devices such as a mobilephone, a smart phone, a tablet personal computer (PC), a smart watch, awatch phone, a mobile communication terminal, an electronic notebook, anelectronic book, a portable multimedia player (PMP), a navigationsystem, an ultra-mobile PC, and the like but also display devices suchas a television, a laptop PC, a monitor, an advertising panel, anInternet of Things (IoT) device, and the like.

Hereinafter, embodiments of the disclosure will be described in detailwith reference to the accompanying drawings.

FIG. 1 is an arrangement plan view of a display device according to anembodiment, and FIG. 2 is a schematic partial cross-sectional view ofthe display device according to an embodiment.

Referring to FIGS. 1 and 2, an embodiment of a display device 1 includesa display area DA, which displays an image, and a non-display area NDAdisposed on a periphery of the display area DA. The display area DA mayhave a rectangular shape with rectangular or rounded corners in a planview in a third direction DR3 or a thickness direction of the displaydevice 1. A planar shape of the display area DA is not limited to therectangular shape and may be variously modified to be another shape suchas a circular shape or an elliptical shape. The display area DA includesa plurality of pixels. A detailed cross-sectional structure of the pixelwill be described below.

The non-display area NDA is disposed on the periphery of the displayarea DA. The non-display area NDA may be disposed to be adjacent to bothsides in a first direction DR1 or both short sides of the display areaDA. In an embodiment, as shown in FIG. 1, the non-display area NDA maybe disposed to be adjacent to both sides in a second direction DR2crossing the first direction DR1 or both long sides of the display areaDA in addition to both short sides thereof and may surround all of thesides of the display area DA. In such an embodiment, the non-displayarea NDA may form or define edge portions of the display area DA.

The display device 1 may include a display panel 100, which displays ascreen, and a driving integrated circuit 300 which is attached to thedisplay panel 100 and drives a pixel circuit of the display panel 100.The driving integrated circuit 300 may be implemented as a chip onplastic (“COP”) including a driving chip (“IC”) and mounted directly onthe display panel 100.

In one embodiment, for example, the display panel 100 is an organiclight emitting display panel. Hereinafter, for convenience ofdescription, embodiments where the display panel 100 is an organiclight-emitting display panel will be described in detail, but thedisclosure is not limited thereto and the display panel 100 may beanother type of display panel such as a liquid crystal display (“LCD”)panel, a field emission display (“FED”) panel, an electrophoreticapparatus, or the like.

In an embodiment, as shown in FIGS. 1 and 2, the display panel 100 mayinclude a main area MA and a bending area BA. The main area MA may beflat. In such an embodiment, the display area DA and a part of thenon-display area NDA of the display panel 100 may be disposed in themain area MA.

The bending area BA may be disposed at least on one side of the mainarea MA. In an embodiment, as shown in FIGS. 1 and 2, a single bendingarea BA is disposed to be adjacent to a lower side of the main area MA,but not being limited thereto. Alternatively, bending areas BA may bedisposed to be adjacent to other sides such as left, right, and uppersides of the main area MA. In an embodiment, the bending areas BA may bedisposed on two or more sides of the main area MA.

The bending area BA may be bent in a direction opposite to a displaydirection (a bottom surface in the case of a top emissive typeapparatus). In an embodiment, as described above, where at least a partof the non-display area NDA is bent in the direction opposite to thedisplay direction, a bezel of the display device 1 may be reduced.

In an embodiment, the display device 1 may further include a sub area SAextending from the bending area BA. The sub area SA may be parallel tothe main area MA. The sub area SA may overlap the main area MA in athickness direction. The above-described bending area BA and sub area SAmay be the non-display area NDA, but not being limited thereto.

The display panel 100 may include a pad area PA disposed in thenon-display area NDA. The pad area PA may be located in the sub area SAas shown in FIG. 1. However, the pad area PA is not limited thereto, andalternatively, may be located in the main area MA or the bending areaBA. The driving integrated circuit 300 may be attached to the pad areaPA of the display panel 100.

A plurality of signal lines are arranged in the pad area PA of thenon-display area NDA. The plurality of signal lines may be connected toa thin film transistor of the pixel in the display area DA through aconnecting line electrically connected to the thin film transistor. Theconnecting line may be disposed on the display area DA and thenon-display area NDA. Bumps of the driving integrated circuit 300 may beconnected to the plurality of signal lines.

The display device 1 may include a printed circuit board 500 attached tothe display panel 100. In an embodiment, the printed circuit board 500may be attached to an outside of the pad area PA of the display panel100 in the non-display area NDA. In such an embodiment, the pad area PAto which the driving integrated circuit 300 is attached may be disposedbetween the display area DA and an area to which the printed circuitboard 500 is attached. The printed circuit board 500 may be attached toa bottom end of the sub area SA. The printed circuit board 500 may be aflexible printed circuit board (“FPCB”). However, the printed circuitboard 500 is not limited thereto, and alternatively, may be connected tothe display panel 100 through a flexible film.

FIG. 3 is a cross-sectional view illustrating a pixel and the pad areaaccording to an embodiment.

In an embodiment, the display device 1 may further include a panelbottom sheet (not shown) disposed below the display panel 100. The panelbottom sheet may be attached to a bottom surface of the display panel100. The panel bottom sheet includes a functional layer. The functionallayer may be a layer which performs a heat dissipation function, anelectromagnetic wave blocking function, a grounding function, abuffering function, a reinforcing function, a supporting function or adigitizing function, for example. The functional layer may be a sheetlayer including or formed of a sheet, a film layer including or formedof a film, a thin film layer, a coating layer, a panel, a plate, and thelike. One functional layer may be a single layer, or may be formed of ordefined by a plurality of laminated thin films or coating layers. Thefunctional layer may be, for example, a support member, a heatdissipation layer, an electromagnetic wave blocking layer, ashock-absorbing layer or a digitizer, for example.

In an embodiment, as shown in FIG. 3, the display panel 100 may includea display substrate 101, a plurality of conductive layers, a pluralityof insulating layers which insulate the conductive layers from eachother, an organic layer EL, or the like.

The display substrate 101 or a first flexible substrate is disposed allover the display area DA and the non-display area NDA. The displaysubstrate 101 may perform a function of supporting elements disposedthereabove. In an embodiment, the display substrate 101 may be aflexible substrate including a flexible material such as polyimide(“PI”) or the like.

A barrier layer 102 or a first barrier layer may be disposed on thedisplay substrate 101. The barrier layer 102 may be disposed on asurface or an upper surface of the display substrate 101. The barrierlayer 102 may effectively prevent humidity and oxygen from penetratingfrom the outside through the display substrate 101. The barrier layer102 may include at least one film selected from a silicon nitride (SiNx)film, a silicon oxide (SiO₂) film, and a silicon oxynitride(SiO_(x)N_(y)) film.

A second flexible substrate 103 may be disposed on the barrier layer102. The second flexible substrate 103 may be disposed on a surface oran upper surface of the barrier layer 102. The second flexible substrate103 may be disposed all over the display area DA and the non-displayarea NDA. The second flexible substrate 103 may include a same materialas the display substrate 101 or the first flexible substrate.

A second barrier layer 104 may be disposed on the second flexiblesubstrate 103. The second barrier layer 104 may be disposed on a surfaceor an upper surface of the second flexible substrate 103. The secondbarrier layer 104 may effectively prevent humidity and oxygen frompenetrating from the outside through the display substrate 101 and thesecond flexible substrate 103. The second barrier layer 104 may includeat least one film selected from an SiNx film, an SiO₂ film, and anSiO_(x)N_(y) film.

A semiconductor layer 105 may be disposed on the second barrier layer104. The semiconductor layer 105 may be disposed on a surface or anupper surface of the second barrier layer 104. The semiconductor layer105 forms a channel of the thin film transistor. The semiconductor layer105 may be disposed in each pixel of the display area DA and may beselectively disposed in the non-display area NA. The semiconductor layer105 may include a source/drain area and an active area. Thesemiconductor layer 105 may include polycrystalline silicon.

A first insulating layer 111 may be disposed on the semiconductor layer105. The first insulating layer 111 may be disposed on or over an entiresurface of the display substrate 101. The first insulating layer 111 maybe a gate insulating film having a gate insulating function. The firstinsulating layer 111 may include a silicon compound, metal oxide, or thelike. In one embodiment, for example, the first insulating layer 111 mayinclude at least one material selected from silicon oxide, siliconnitride, silicon oxynitride, aluminum (Al) oxide, tantalum (Ta) oxide,hafnium (Hf) oxide, zirconium (Zr) oxide, titanium (Ti) oxide, and acombination thereof.

A first conductive layer 120 may be disposed on the first insulatinglayer 111. The first conductive layer 120 may include a gate electrodeGE of a thin film transistor, a first electrode CE1 of a storagecapacitor, and a connecting line. The connecting line may extend throughthe display area DA and the pad area PA. The first conductive layer 120may include at least one material selected from molybdenum (Mo), Al,platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au),nickel (Ni), neodymium (Nd), iridium (Ir), chrome (Cr), calcium (Ca),Ti, Ta, tungsten (W), and copper (Cu). The first conductive layer 120may be a single film or a multi-layer film (e.g., a lamination film), inwhich each layer include or is formed of at least one material selectedfrom the above-listed material.

A second insulating layer 112 may be disposed on the first conductivelayer 120. The second insulating layer 112 may insulate the firstconductive layer 120 and a second conductive layer 130 from each other.The second insulating layer 112 may be disposed generally in the displayarea DA. Although not shown in the drawings, the second insulating layer112 may expose a top surface of the connecting line in the pad area PA.The second insulating layer 112 may include at least one materialselected from the above-listed materials of the first insulating layer111.

The second conductive layer 130 may be disposed on the second insulatinglayer 112. The second conductive layer 130 may include a secondelectrode CE2 of the storage capacitor. A material of the secondconductive layer 230 may be selected from the above-listed materials ofthe first conductive layer 120. The first electrode CE1 of the storagecapacitor and a second electrode CE2 of the storage capacitor maycollectively define a capacitor with the second insulating layer 112.

A third insulating layer 113 may be disposed on the second conductivelayer 130. The third insulating layer 113 may include at least onematerial selected from the above-listed materials of the firstinsulating layer 111. In some embodiments, the third insulating layer113 may include an organic insulating material. The organic insulatingmaterial may include at least one material selected from theabove-listed materials of a first via layer VIA1 which will be describedbelow.

A third conductive layer 140 may be disposed above the third insulatinglayer 113, the second insulating layer 112, and the connecting line. Thethird conductive layer 140 may include a source electrode SE, a drainelectrode, DE, and a high-potential voltage electrode ELVDDE. The thirdconductive layer 140 may include at least one material selected from Mo,Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Ca, Ti, Ta, W, and Cu. The thirdconductive layer 140 may be a single film including or formed of atleast one material selected from the above-listed material. The thirdconductive layer 140 is not limited thereto, and may be a laminationfilm. In an embodiment, the third conductive layer 140 may have alamination structure such as Ti/Al/Ti, Mo/Al/Mo, Mo/AlGe/Mo, Ti/Cu, orthe like. In an embodiment, for example, the third conductive layer 140may include a structure of Ti/Al/Ti.

Although not shown in the drawings, the third conductive layer 140 mayfurther include a signal line disposed in the pad area PA. The signalline may be disposed to overlap the connecting line of the firstconductive layer 120 in a thickness direction of the display substrate101 or the third direction DR3 and may be electrically connected to theconnecting line through an exposed part of the second insulating layer112 in the pad area PA. A planar size of the signal line may be greaterthan a planar size of the connecting line. Herein, the term “planarsize” may mean a size when shown in a plan view in the third directionDR3.

The semiconductor layer 105, the gate electrode GE of the thin filmtransistor of the first conductive layer 120, and the source/drainelectrodes SE/DE of the third conductive layer 140 may define a tripleterminal of the thin film transistor. Hereinafter, the semiconductorlayer 105, the gate electrode GE of the thin film transistor of thefirst conductive layer 120, and the source/drain electrodes SE/DE of thethird conductive layer 140 may be referred to as a thin film transistorlayer LTPS (refer to FIG. 6).

The first via layer VIA1 may be disposed on the third conductive layer140. The first via layer VIA1 may include an organic insulatingmaterial. The organic insulating layer may include at least one materialselected from an acrylic resin, an epoxy resin, a phenolic resin, apolyamide resin, a polyimide resin, an unsaturated polyester resin, apoly phenylenether resin, a polyphenylenesulfide resin, andbenzocyclobutene (“BCB”).

A fourth conductive layer 150 may be disposed on the first via layerVIAL The fourth conductive layer 150 may include a data line DL, aconnecting electrode CNE, and a high-potential voltage line ELVDDL. Thedata line DL may be electrically connected to the source electrode SE ofthe thin film transistor through a via hole defined through the firstvia layer VIAL The connecting electrode CNE may be electricallyconnected to the drain electrode DE of the thin film transistor througha contact hole defined through the first via layer VIAL. Thehigh-potential voltage line ELVDDL may be electrically connected to thehigh-potential voltage electrode ELVDDE through a contact hole definedthrough the first via layer VIAL. The fourth conductive layer 150 mayinclude at least one material selected from the above-listed materialsof the third conductive layer 140.

A second via layer VIA2 may be disposed on the fourth conductive layer150. The second via layer VIA2 may include at least one materialselected from the above-listed materials of the first via layer VIA′.

An anode electrode ANO is disposed on the second via layer VIA2. Theanode electrode ANO may be electrically connected to the connectingelectrode CNE through a contact hole defined through the second vialayer VIA2.

A bank layer BANK may be disposed on the anode electrode ANO. A contacthole, which exposes the anode electrode ANO, is defined through the banklayer BANK. The bank layer BANK may include an organic insulatingmaterial or inorganic insulating material. In one embodiment, forexample, the bank layer BANK may include at least one material selectedfrom a photoresist, a polyimide resin, an acrylic resin, a siliconecompound and a polyacrylic resin, for example.

The organic layer EL may be disposed on a top surface of the anodeelectrode ANO and in an opening portion of the bank layer BANK. Acathode electrode CAT is disposed on the organic layer EL and the banklayer BANK. The cathode electrode CAT may be a common electrode disposedover the plurality of pixels.

A thin film encapsulation layer 170 is disposed on the cathode electrodeCAT. The thin film encapsulation layer 170 may cover an organiclight-emitting diode (“OLED”). The thin film encapsulation layer 170 maybe a lamination film formed by alternately laminating an inorganic filmand an organic film. In one embodiment, for example, the thin filmencapsulation layer 170 may include a first inorganic encapsulation film171, an organic encapsulation film 172, and a second inorganicencapsulation film 173 which are sequentially laminated.

In an embodiment of the display device 1, a residue 710 may be furtherdisposed on an opposing surface (e.g., a lower surface) of the displaysubstrate 101 opposite to the surface thereof. The residue 710 mayinclude at least one film selected from an SiNx film, an SiO2 film, andan SiOxNy film.

The residue 710 may include a same material as that of a dipole-removinglayer 710 a (refer to FIG. 6) disposed between a carrier substrate 600(refer to FIG. 6) and the display substrate 101 to easily detach ordelaminate the carrier substrate 600 from the display substrate 101 in amethod of manufacturing the display device according to an embodiment,which will be described below. The residue 710 may be a film or layerthat is a residual part of the dipole-removing layer 710 a when thedipole-removing layer 710 a and the carrier substrate 600 are detachedor delaminated from the opposing surface of the display substrate 101.

FIG. 4 is a cross-sectional view illustrating a pixel according to analternative embodiment.

The pixel of a display device 2 shown in FIG. 4 is substantially thesame as the pixel of the display device 1 of FIG. 3 except that thesecond flexible substrate 103 and the second barrier layer 104 describedabove with reference to FIG. 3 are omitted. In such an embodiment, thesemiconductor layer 105 may be disposed on a surface of the barrierlayer 102.

Hereinafter, an embodiment of a method of manufacturing theabove-described display device will be described. In such an embodiment,components substantially the same or like as those of the embodimentsdescribed above will be referred to with the same or like referencenumerals, and any repetitive description thereof will hereinafter beomitted or simplified.

FIG. 5 is a flowchart illustrating a method of manufacturing a displaydevice according to an embodiment, and FIGS. 6 and 10 arecross-sectional views of processing operations of the method ofmanufacturing the display device according to an embodiment. FIG. 7 isan enlarged cross-sectional view illustrating area A of FIG. 6, FIG. 8is a cross-sectional view illustrating electrostatic attraction betweena carrier substrate and a flexible substrate, and FIG. 9 is across-sectional view illustrating a case in which the dipole-removinglayer blocks the electrostatic attraction between the flexible substrateand the carrier substrate.

First, referring to FIGS. 5 and 6, an embodiment of a method ofmanufacturing a display device may include providing or forming aninorganic layer on a carrier substrate (S10), providing or forming afirst flexible substrate on the inorganic layer (S30), providing orforming a first barrier layer on the first shielding layer (S50), andproviding or forming a thin film transistor on the first barrier layer(S70). Such an embodiment of a method of manufacturing a display devicemay further include providing or forming a first shielding layerincluding a metal on the first flexible substrate.

The carrier substrate 600 may perform a function of supporting thedisplay substrate 101 or the first flexible substrate, the first barrierlayer 102, the second flexible substrate 103, the second barrier layer104 and the thin film transistor layer LTPS from below when depositedthereon. The carrier substrate 600 may include a rigid material. In oneembodiment, for example, the carrier substrate 600 may include SiO2 asshown in FIG. 8. In an embodiment, the carrier substrate 600 may furtherinclude a small amount of impurities in addition to SiO2. The impuritiesmay include Al, potassium (K), or sodium (Na). In an embodiment, K andNa may be included as positive ions in the carrier substrate 600. Theimpurities of the carrier substrate 600 may cause electrostaticattraction with the first flexible substrate 101, which will bedescribed below in greater detail.

In an embodiment, an inorganic layer 710 a is provided or formed on thecarrier substrate 600.

The inorganic layer 710 a may perform a function of increasing ease in aprocess of delaminating the carrier substrate 600 from the firstflexible substrate 101 by reducing electrostatic attraction, and indetail, dipole moments between the carrier substrate 600 and the firstflexible substrate 101 as follows. The inorganic layer 710 a may includeat least one film selected from an SiNx film, an SiO2 film, and anSiOxNy film.

In an embodiment, the operation S10 of providing or forming theinorganic layer 710 a on the carrier substrate 600 may include forming acomponent of the inorganic layer 710 a on a surface of the carriersubstrate 600 using a chemical vapor deposition (“CVD”).

In such an embodiment, the inorganic layer 710 a is formed using CVD,such that the inorganic layer 710 a may be a pure inorganic layerwithout impurities.

In such an embodiment, the first flexible substrate 101 is provided orformed on the inorganic layer 710 a (S30).

Since the constituent materials and the function of the first flexiblesubstrate 101 are substantially the same as those described above withreference to FIG. 3, any repetitive detailed description thereof will beomitted.

A first thickness t1 of the inorganic layer 710 a may be in a range fromabout 10 angstrom (A) to about 6000 Å. When the first thickness t1 ofthe inorganic layer 710 a is greater than or equal to about 10 Å,electrostatic attraction between the first flexible substrate 101 andthe carrier substrate 600 may be effectively reduced. When the firstthickness t1 of the inorganic layer 710 a is smaller than or equal toabout 6000 Å, the first flexible substrate 101 which is formed after theinorganic layer 710 a may be effectively prevented from becomingwrinkled or being formed with a surficial step due to the inorganiclayer 710 a formed using CVD.

In one embodiment, for example, a second thickness t2 of the firstflexible substrate 101 may be in a range from about 5 micrometers (μm)to about 30 μm. The second thickness t2 of the first flexible substrate101 may be smaller than the first thickness t1 of the inorganic layer710 a.

A third thickness t3 of the carrier substrate 600 may be in a range ofabout 3 millimeters (mm) to about 10 mm. The third thickness t3 of thecarrier substrate 600 may be greater than the second thickness t2 of thefirst flexible substrate 101 and the first thickness t1 of the inorganiclayer 710 a.

Referring to FIG. 7, the inorganic layer 710 a and the first flexiblesubstrate 101 may be physically coupled with each other by a firstcoupling force F1, the inorganic layer 710 a and the carrier substrate600 may be physically coupled with each other by a second coupling forceF2, and the first flexible substrate 101 and the carrier substrate 600may be physically coupled with each other by a third coupling force F3.

The first coupling force F1 may be smaller than the second couplingforce F2. The third coupling force F3 may be electrostatic attraction.In such an embodiment, the third coupling force F3 may be formed by adipole moment between components of the first flexible substrate 101 andthe carrier substrate 600 among the electrostatic attraction.

In such an embodiment, a first barrier layer 102 is provided or formedon the first flexible substrate 101 (S50).

Since the component and the function of the first barrier layer 102 aresubstantially the same as those described above with reference to FIG.3, any repetitive detailed description thereof will be omitted.

In an embodiment, the operation S50 of providing or forming the firstbarrier layer 102 may be an operation of forming a component of thefirst barrier layer 102 on a surface of the first flexible substrate 101using plasma enhanced chemical vapor deposition (“PECVD”).

When the first barrier layer 102 is formed on the surface of the firstflexible substrate 101, the third coupling force F3 between the firstflexible substrate 101 and the carrier substrate 600 may increase, whichwill be below in greater detail.

In an embodiment, the second flexible substrate 103 is provided orformed on the first barrier layer 102. Since the component and thefunction of the second flexible substrate 103 are substantially the sameas those described above with reference to FIG. 3, any repetitivedetailed description thereof will be omitted.

In an embodiment, the second barrier layer 104 is provided or formed onthe second flexible substrate 103. Since the component and the functionof the second barrier layer 104 are substantially the same as thosedescribed above with reference to FIG. 3, any repetitive detaileddescription thereof will be omitted.

In an embodiment, the thin film transistor layer LTPS is formed on thesecond barrier layer 104 (70).

In an alternative embodiment, as described with reference to FIG. 4, thesecond flexible substrate 103 and the second barrier layer 104 may beomitted. In such an embodiment, the first barrier layer 102 is formed(S50) and then the thin film transistor layer LTPS is formed on thefirst barrier layer 102.

Since the thin film transistor layer LTPS are substantially the same asthose described with reference to FIG. 3, any repetitive detaileddescription thereof will be omitted.

Referring to FIG. 8, as described above, the carrier substrate 600 mayfurther include a small amount of impurities in addition to SiO2. Theimpurities may include Al, K, or Na. In an embodiment, K and Na may beincluded as positive ions in the carrier substrate 600. The impuritiesof the carrier substrate 600 may cause electrostatic attraction with thefirst flexible substrate 101. In such an embodiment, electrostaticattraction may occur between the impurities, and particularly, positiveions of the carrier substrate 600 and a component of the first flexiblesubstrate 101. A total sum of the electrostatic attractions may be theabove-described coupling force F3. When some of the impurities of thecarrier substrate 600 have positive ions, some components of the firstflexible substrate 101 take negative ions such that a dipole moment mayoccur therebetween.

Electrostatic attraction, that is, a dipole moment between some of theimpurities of the carrier substrate 600, which take positive ions, andsome components of the first flexible substrate 101, which take negativeions, may increase the third coupling force F3 between the carriersubstrate 600 and the first flexible substrate 101 and may makedelaminating of the carrier substrate 600 difficult in a process ofdelaminating the carrier substrate 600 from the first flexible substrate101.

In an embodiment of the method of manufacturing the display device, asshown in FIG. 9, the inorganic layer 710 a without impurities may beprovided or formed between the carrier substrate 600 and the firstflexible substrate 101 to prevent the electrostatic attraction, that is,the dipole moment, from occurring between some of the impurities of thecarrier substrate 600, which take positive ions, and some of componentsof the first flexible substrate 101, which take negative ions. In suchan embodiment, the third coupling force F3 may be blocked in advance.Accordingly, the carrier substrate 600 may be easily detached ordelaminated from the first flexible substrate 101 in an operation ofdelaminating the carrier substrate 600 which will be described below.

In an embodiment, the carrier substrate 600 is detached or delaminatedfrom the opposing surface of the first flexible substrate 101.

The operation of delaminating the carrier substrate 600 from the othersurface of the first flexible substrate 101 may further includedelaminating the inorganic layer 710 a formed between the first flexiblesubstrate 101 and the carrier substrate 600 with the carrier substrate600. In such an embodiment, the coupling force between the inorganiclayer 710 a and the carrier substrate 600 is greater than the couplingforce between the inorganic layer 710 a and the first flexible substrate101 as described above.

The operation of delaminating the carrier substrate 600 from theopposing surface of the first flexible substrate 101 may includediminishing the coupling force between the first flexible substrate 101and the inorganic layer 710 a by emitting lasers toward the opposingsurface of the first flexible substrate 101 and mechanically detachingthe inorganic layer 710 a and the carrier substrate 600 from theopposing surface of the first flexible substrate 101.

In an embodiment, in a state in which the third coupling force F3between the first flexible substrate 101 and the carrier substrate 600is adequately diminished, it is possible to simply perform mechanicaldetachment when the carrier substrate 600 is delaminated from theopposing surface of the first flexible substrate 101.

FIG. 11 is a cross-sectional view illustrating a processing operation ofa method of manufacturing a display device according to an alternativeembodiment.

Referring to FIG. 11, such an embodiment of a method of manufacturing adisplay device is substantially the same as an embodiment of the methodof manufacturing the display device described above with reference toFIGS. 5 to 9 except that a dipole-removing layer including an organicmaterial is formed between the carrier substrate 600 and the firstflexible substrate 101.

In such an embodiment, the dipole-removing layer may be provided orformed on the carrier substrate 600, and the first flexible substrate101 may be provided or formed on the dipole-removing layer.

The dipole-removing layer may include an organic material and may be apure organic layer without impurities like the inorganic layer 710 a.

Since the dipole-removing layer includes the organic material, acoupling force with the carrier substrate 600 may be greater than acoupling force with the first flexible substrate 101 thereabove.Accordingly, as shown in FIG. 11, although a part of the dipole-removinglayer is also separated from the opposing surface of the first flexiblesubstrate 101 when the carrier substrate 600 is delaminated therefrom, alarge amount of the dipole-removing layer may remain on the opposingsurface of the first flexible substrate 101. An organic residue 710_1which remains on the opposing surface of the first flexible substrate101 may include uneven parts and scratches SC on a surface thereof.

FIG. 12 is a cross-sectional view illustrating a pixel according toanother alternative embodiment.

Referring to FIG. 12, such an embodiment of a display device 3 issubstantially the same as an embodiment of the display device 1described above with reference to FIGS. 1 to 3 except that the residue710 is omitted from the display device 1 and a shielding layer 720 isfurther disposed between the first flexible substrate 101 and the firstbarrier layer 102.

In an embodiment of the display device 3, the shielding layer 720 may befurther disposed between the first flexible substrate 101 and the firstbarrier layer 102.

The shielding layer 720 may include a metal. The metal may include, forexample, at least one selected from Mo, Al, Pt, Pd, Ag, Mg, Au, Ni, Nd,Ir, Cr, Ca, Ti, Ta, W, and Cu. The shielding layer 720 may be a singlefilm or a plurality of laminated films of the metal.

The shielding layer 720 may perform a function of reducing electrostaticattraction between the first flexible substrate 101 and the carriersubstrate 600. In such an embodiment, as described below, in theshielding layer 720, an electrostatic potential energy differencebetween an upper part and a lower part of the first flexible substrate101 is generated by plasma in the operation of forming the first barrierlayer 102. The electrostatic potential energy difference may causeelectrostatic attraction between the first flexible substrate 101 andthe carrier substrate 600 to increase. in an embodiment of the displaydevice 3, the electrostatic potential energy difference between theupper part and the lower part of the first flexible substrate 101 may beeffectively prevented from being generated by plasma in advance by thefirst barrier layer 102 to prevent an increase in the electrostaticattraction between the first flexible substrate 101 and the carriersubstrate 600 in advance.

A fourth thickness t4 of the shielding layer 720 may be in a range fromabout 10 Å to about 6000 Å. When the fourth thickness t4 of theshielding layer 720 is greater than or equal to about 10 Å, theelectrostatic attraction between the first flexible substrate 101 andthe carrier substrate 600 may be effectively reduced. When the fourththickness t4 of the shielding layer 720 is smaller than or equal toabout 6000 Å, it is possible to prevent poor performance of equipmentused in the following process due to the shielding layer 720.

In an embodiment, the shielding layer 720 may include a metallic oxide.The metallic oxide may be, for example, indium tin oxide (“ITO”), indiumzinc oxide (“IZO”), zinc oxide (“ZnO”), indium-tin-zinc-oxide (“ITZO”),magnesium oxide (MgO) or the like, but not being limited thereto.

FIG. 13 is a cross-sectional view illustrating a pixel according toanother alternative embodiment.

Referring to FIG. 13, such an embodiment of a display device 4 issubstantially the same as an embodiment of the display device 3described above with reference to FIG. 12 except that the secondflexible substrate 103 and the second barrier layer 104 are omitted.

In such an embodiment of the display device 4, the second flexiblesubstrate 103 and the second barrier layer 104 may be omitted.

Since other features are substantially the same as those described abovewith reference to FIGS. 12 and 3, any repetitive detailed descriptionthereof will be omitted.

FIG. 14 is a cross-sectional view illustrating a pixel according toanother alternative embodiment.

Referring to FIG. 14, such an embodiment of a display device 4 issubstantially the same as an embodiment of the display device 3described above with reference to FIG. 12 except that a second shieldinglayer 730 is further disposed between the second flexible substrate 103and the second barrier layer 104.

In such an embodiment of the display device, as described above, thesecond shielding layer 730 may be further disposed between the secondflexible substrate 103 and the second barrier layer 104. The secondshielding layer 730 may include at least one material selected from theabove-listed materials of the shielding layer 720. A thickness of thesecond shielding layer 730 may be equal or substantially similar to thethickness of the shielding layer 720.

FIG. 15 is a flowchart illustrating a method of manufacturing a displaydevice according to an alternative embodiment, FIGS. 16 to 18 arecross-sectional views illustrating processing operations of a method ofmanufacturing a display device according to an alternative embodiment,FIGS. 19 and 20 are graphs illustrating a state in which a couplingforce between a flexible substrate and a carrier substrate increasesduring a deposition process of a barrier layer, and FIG. 21 is across-sectional view illustrating a case in which a shielding layerreduces the coupling force between the flexible substrate and thecarrier substrate.

Referring to FIGS. 15 to 21, an embodiment of a method of manufacturinga display device may include providing or forming the first flexiblesubstrate 101 on the carrier substrate 600 (S30_1), providing or formingthe first shielding layer 720 including a metal on the first flexiblesubstrate 101 (S40), providing or forming the first barrier layer 102 onthe first shielding layer 720 (S50_1), and providing or forming the thinfilm transistor layer LTPS on the first barrier layer 102 (S70).

In such an embodiment, referring to FIG. 16, the first flexiblesubstrate 101 is provided or formed on the carrier substrate 600(S30_1). In such an embodiment, the method of manufacturing the displaydevice is substantially the same as an embodiment of the method ofmanufacturing the display device described above with reference to FIG.5 except that the first flexible substrate 101 is provided or formeddirectly on the carrier substrate 600, and any repetitive detaileddescription of the same or like elements thereof will be omitted.

In such an embodiment, referring to FIG. 17, the first shielding layer720 is provided or formed on the first flexible substrate 101 (S40).

Referring to FIG. 18, subsequently, the first barrier layer 102 isprovided or formed on the first shielding layer 720 (S50_1).Subsequently, the second flexible substrate 103 may be provided orformed on the first barrier layer 102 and the second barrier layer 104may be provided or formed on the second flexible substrate 103.Subsequently, the thin film transistor layer LTPS is provided or formedon the second barrier layer 104.

Since the operation (S50_1) of forming the first barrier layer 102 issubstantially the same as that of the method of manufacturing thedisplay device described above with reference to FIG. 5 except forforming the first barrier layer 102 on the first shielding layer 720,any repetitive detailed description thereof will be omitted.

Since the operations of forming the second flexible substrate 103, thesecond barrier layer 104, and the thin film transistor layer LTPS assubstantially the same as those described above in an embodiment of themethod of manufacturing the display device, any repetitive detaileddescription thereof will be omitted.

Referring to FIGS. 19 to 21, in the operation (S50_1) of forming thefirst barrier layer 102, an electrostatic potential energy differencebetween the upper part and the lower part of the first flexiblesubstrate 101 may be generated by plasma. The first barrier layer 102may correspond to a plasma area located on a right side of a graph, theupper part of the first flexible substrate 101 may correspond to apresheath area, and the lower part of the first flexible substrate 101may correspond to a sheath area. That is, the upper part and the lowerpart of the first flexible substrate 101 may have a considerableelectrostatic potential energy difference therebetween. Accordingly,electrostatic attraction corresponding thereto may further increasebetween the lower part of the first flexible substrate 101 and thecarrier substrate 600.

In an embodiment of the method of manufacturing the display device, anincrease in the electrostatic attraction between the first flexiblesubstrate 101 and the carrier substrate 600 may be effectively preventedby preventing the electrostatic potential energy difference between theupper part and the lower part of the first flexible substrate 101 fromoccurring due to plasma generated in the operation (S50_1) of formingthe first barrier layer 102 by forming the shielding layer 720 betweenthe first barrier layer 102 and the first flexible substrate 101 beforethe operation (S50_1) of forming the first barrier layer 102.

FIG. 22 is a cross-sectional view illustrating a pixel according toanother alternative embodiment, and FIG. 23 is a table illustrating acoupling force between a flexible substrate and a carrier substrateaccording to another embodiment.

Referring to FIG. 22, in such an embodiment, a pixel of a display deviceis substantially the same as the embodiment described above withreference to FIG. 3 except that the shielding layer 720 described abovewith reference to FIG. 12 is further disposed.

In such an embodiment, the method of manufacturing the display devicemay include forming the inorganic layer 710 a on the carrier substrate600 (S10), forming the first flexible substrate 101 on the inorganiclayer 710 a (S30), forming the first shielding layer 720 including themetal on the first flexible substrate 101 (S40), forming the firstbarrier layer 102 on the first shielding layer 720 (S50_1), and formingthe thin film transistor LTPS on the first barrier layer 102 (S70).Since such operations are substantially the same as those describedabove with reference to FIGS. 5 and 15, any repetitive detaileddescription thereof will be omitted.

Referring to FIG. 23, in a method of manufacturing the display device,when the inorganic layer 710 a and the shielding layer 720 are notprovided and the first barrier layer 102 is not provided on the firstflexible substrate 101, a coupling force between the first flexiblesubstrate 101 and the carrier substrate 600 is about 10 gram-force perinch (gf/inch). In this case, when the first barrier layer 102 is formedon the first flexible substrate 101, a coupling force therebetweenconsiderably increases to about 1087.9 gf/inch, such that it may bedifficult to delaminate the carrier substrate 600 from the firstflexible substrate 101.

In an embodiment of the invention where the inorganic layer 710 a andthe shielding layer 720 are provided as described above, when the firstbarrier layer 102 is not formed on the first flexible substrate 101, acoupling force between the first flexible substrate 101 and the carriersubstrate 600 is about 4.6 gf/inch, which is reduced considerablyfurther than that of a case in which the inorganic layer 710 a and theshielding layer 720 are not provided. In such an embodiment, it can beseen that when the first barrier layer 102 is formed on the firstflexible substrate 101, a coupling force between the first flexiblesubstrate 101 and the carrier substrate 600 is about 7.3 gf/inch whichis considerably reduced further than a coupling force between thecarrier substrate 600 and the first flexible substrate 101 when theinorganic layer 710 a and the shielding layer 720 are not provided andthe first barrier layer 102 is formed on the first flexible substrate101.

According to an embodiment of the method of manufacturing the displaydevice, in a process of delaminating the carrier substrate 600 from theopposing surface of the first flexible substrate 101, the carriersubstrate 600 may be easily detached or delaminated directly from theopposing surface of the first flexible substrate 101 using only amechanical detaching method without performing an operation ofdiminishing the coupling force between the first flexible substrate 101and the carrier substrate 600 using ultraviolet lasers.

According to embodiments of the disclosure, a display device may have ahigh bonding reliability.

The invention should not be construed as being limited to the exemplaryembodiments set forth herein. Rather, these exemplary embodiments areprovided so that this disclosure will be thorough and complete and willfully convey the concept of the invention to those skilled in the art.

While the invention has been particularly shown and described withreference to exemplary embodiments thereof, it will be understood bythose of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit or scopeof the invention as defined by the following claims.

What is claimed is:
 1. A method of manufacturing a display device, themethod comprising: providing an inorganic layer on a carrier substrate;providing a first flexible substrate on the inorganic layer; providing afirst shielding layer including a metal on the first flexible substrate;providing a first barrier layer on the first shielding layer; andproviding a thin film transistor layer on the first barrier layer,wherein the inorganic layer comprises at least one material selectedfrom silicon nitride (SiNx), silicon oxide (SiOx), and siliconoxynitride (SiOxNy), and wherein a thickness of the inorganic layer isin a range from about 10 Å to about 6000 Å.
 2. The method of claim 1,wherein a thickness of the first shielding layer is in a range fromabout 10 Å to about 6000 Å.
 3. The method of claim 1, wherein theinorganic layer prevents electrostatic attraction between the carriersubstrate and the first flexible substrate from being generated.
 4. Themethod of claim 3, wherein the providing the first barrier layercomprises forming the first barrier layer using plasma enhanced chemicalvapor deposition.
 5. The method of claim 4, further comprising:providing a second flexible substrate on a surface of the first barrierlayer after the providing the first barrier layer and before theproviding the thin film transistor layer on the first barrier layer. 6.The method of claim 5, further comprising: providing a second shieldinglayer on a surface of the second flexible substrate after the providingthe second flexible substrate and before the providing the thin filmtransistor layer.
 7. The method of claim 6, further comprising:providing a second barrier layer on a surface of the second shieldinglayer after the providing the second shielding layer on the surface ofthe second flexible substrate and before the providing the thin filmtransistor layer.
 8. The method of claim 4, wherein a first couplingforce between the inorganic layer and the carrier substrate is greaterthan a second coupling force between the first flexible substrate andthe inorganic layer.
 9. The method of claim 8, further comprising:delaminating the carrier substrate and the inorganic layer from thesurface of the first flexible substrate after the providing the thinfilm transistor layer.
 10. The method of claim 9, wherein thedelaminating the carrier substrate and the inorganic layer from thesurface of the first flexible substrate comprises delaminating thecarrier substrate and the inorganic layer from the surface of the firstflexible substrate using a mechanical detaching method.
 11. A method ofmanufacturing a display device, the method comprising: providing adipole-removing layer on a carrier substrate; providing a flexiblesubstrate on the dipole-removing layer; providing a barrier layer on theflexible substrate; and providing a thin film transistor layer on thebarrier layer, wherein the dipole-removing layer comprises an inorganicmaterial, and wherein a thickness of the dipole-removing layer is in arange from about 10 Å to about 6000 Å.
 12. The method of claim 11,wherein the inorganic material comprises at least one material selectedfrom silicon nitride (SiNx), silicon oxide (SiOx), and siliconoxynitride (SiOxNy).
 13. The method of claim 11, further comprising:delaminating the carrier substrate and the dipole-removing layer from asurface of the flexible substrate after the providing the thin filmtransistor layer.
 14. The method of claim 13, wherein the delaminatingthe carrier substrate and the dipole-removing layer from the surface ofthe flexible substrate comprises emitting ultraviolet lasers toward thesurface of the flexible substrate and removing the carrier substrate andthe dipole-removing layer from the surface of the flexible substrateusing a mechanical detaching method.
 15. A display device comprising: afirst flexible substrate; a first barrier layer disposed on a surface ofthe first flexible substrate; a thin film transistor layer disposed on asurface of the first barrier layer; a residue disposed on an opposingsurface of the first flexible substrate; and a first shielding layerdisposed between the first flexible substrate and the first barrierlayer, wherein the residue comprises an inorganic material.
 16. Thedisplay device of claim 15, wherein the first shielding layer comprisesa metal.
 17. The display device of claim 15, further comprising: asecond flexible substrate disposed between the first barrier layer andthe thin film transistor layer; and a second barrier layer disposedbetween the second flexible substrate and the thin film transistorlayer.
 18. The display device of claim 17, further comprising: a secondshielding layer disposed between the second barrier layer and the secondflexible substrate, wherein the second shielding layer comprises ametal.
 19. A display device comprising: a first flexible substrate; afirst barrier layer disposed on a surface of the first flexiblesubstrate; a thin film transistor layer disposed on a surface of thefirst barrier layer; and a residue disposed on an opposing surface ofthe first flexible substrate, wherein the residue comprises an inorganicmaterial, wherein the inorganic material comprises at least one materialselected from silicon nitride (SiNx), silicon oxide (SiOx), and siliconoxynitride (SiOxNy).